国家/地区 美国（6）
IPC部 C（6） B（4）
IPC大类 C01（5） B82（4）
IPC小类 C01B（5） B82Y（4）
IPC C01B031/04（5） B82Y040/00（4） B82Y030/00（2）
发明人 TOUR J M（4） PENG Z（2） SUN Z（2）
YAN Z（2）
公开年 2014（6）
申请年 2013（3）  2014（2） 
专利权人 UNIV RICE WILLIAM MARSH（6）

Manufacture of graphene quantum dots used for road stickers, road signs, coatings, clothing, paints and photographic processing materials, involves exposing carbon source chosen from coal and coke to oxidant.

TOUR J M, YE R, XIANG C, LIN J, PENG Z, HAYASHI K, CERIOTTI G

Forming graphene film, used in optoelectronics, comprises depositing non-gaseous carbon source onto catalyst surface, exposing non-gaseous carbon source to a gas and initiating the conversion of non-gaseous carbon source to graphene film.

TOUR J, SUN Z, YAN Z, RUAN G, PENG Z

Preparation of graphene nanoribbons used for microelectronics and nanoelectronics, involves patterning graphene film using meniscus as mask, and forming graphene nanoribbons from meniscus-masked region of graphene film.

TOUR J M, ABRAMOVA V, SLESAREV A

Controllably forming Bernal-stacked graphene layers involves cleaning surface of catalyst, annealing, applying carbon source onto the cleaned and annealed surface of the catalyst in reaction chamber, and growing the graphene layers on it.

TOUR J M, SUN Z, RAJI A O

Composition for removing carbon dioxide from gas source comprises nanocarbon support e.g. fullerene, nano-graphite, graphene; and an aliphatic amine attached to the nanocarbon support to form aliphatic amine-nanocarbon material.

BARRON A R, DILLON E

Forming single-crystal grapheme for fabricating e.g. photovoltaic devices involves cleaning and annealing the surface of catalyst, applying carbon source to surface of catalyst, and growing single-crystal graphene on surface of catalyst.

TOUR J M, YAN Z