国家/地区 中国（5）
IPC部 C（5）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/186（3）
发明人 ZOU D（5）
公开年 2021（3） 2020（2）
申请年 2021（3）  2020（2） 
专利权人 UNIV SOUTHERN SCI TECHNOLOGY（5）

Method for preparing graphene film in batches, involves providing each container with substrate through chemical vapour deposition reaction, and depositing carbon source on surface of substrate to obtain graphene film.

ZOU D, ZHOU Z, ZHAO Y, YU D

Preparing single crystal graphene film comprises e.g. providing substrate, carbon source and container, providing at least one through hole on container, placing substrate in container, and depositing carbon source.

ZOU D, TIAN Z, ZHANG Z, ZHAO Y, YU D

Purifying graphene film by providing graphene film, protective gas, hydrogen and carbon source in mixed atmosphere, etching defect positions of graphene film, and growing graphene on etched area through chemical vapor deposition reaction.

ZOU D, ZHOU Z, ZHAO Y, YU D

Preparing double-layer graphene used as double-layer graphene film, by providing metal substrate, reducing gas and carbon source, subjecting metal substrate to heating treatment and annealing treatment, and adding carbon source.

ZOU D, ZHAO Y, LIU S, ZHANG Z, YU D

Method for preparing three-layer graphene, involves connecting metal substrate to solid carbon source and contained in chemical vapor deposition reaction system, and generating three layers of graphene on surface of metal substrate.

ZOU D, ZHAO Y, LIU S, ZHANG Z, YU D