国家/地区 中国（5）
IPC部 C（3） G（2）
IPC大类 C01（3） G01（2）
IPC小类 C01B（3）
IPC C01B032/186（2）
发明人 SONG X（3） LI C（2） LIU S（2）
YU D（2） ZHANG Z（2） ZHAO Y（2）
ZOU D（2）
公开年 2020（5）
申请年 2020（5） 
专利权人 UNIV SOUTHERN SCI TECHNOLOGY（5）

Preparing double-layer graphene used as double-layer graphene film, by providing metal substrate, reducing gas and carbon source, subjecting metal substrate to heating treatment and annealing treatment, and adding carbon source.

ZOU D, ZHAO Y, LIU S, ZHANG Z, YU D

Tunneling type MEMS air pressure sensor, has annular metal electrode and graphene film orderly arranged on substrate, graphene film covers hollow cavity of annular metal electrode, edge of graphene film fixed on annular metal electrode.

SONG X, LIU X, LI C

Tunnelling type acceleration sensor has graphene movable mechanical part fixedly arranged on base, source electrode, drain electrode and gate are arranged on base between base and graphene movable mechanical part and tunneling component.

SONG X, YAN Y, LI C

Method for preparing three-layer graphene, involves connecting metal substrate to solid carbon source and contained in chemical vapor deposition reaction system, and generating three layers of graphene on surface of metal substrate.

ZOU D, ZHAO Y, LIU S, ZHANG Z, YU D

Preparing suspended graphene structure useful for preparing microelectromechanical system comprises processing diaphragm to perform patterning to obtain the patterned area and the remaining areas, and removing remaining regions.

SONG X, ZENG W, WANG Y