国家/地区 中国（7）
IPC部 C（5） H（4）
IPC大类 H01（4） C23（3） C01（2）
IPC小类 C23C（3） C01B（2） H01G（2）
H01L（2）
IPC C23C014/06（3） C23C014/35（3） C23C016/34（3）
C01B031/04（2） H01G011/86（2） H01L021/02（2）
发明人 HAO Y（6） ZHANG J（6） NING J（4）
WANG D（4） CHEN Z（3） LU Q（3）
LV J（3） MU M（3）
公开年 2016（7）
申请年 2016（6） 
专利权人 UNIV XIDIAN（7）

Preparing ultra three dimension graphene used for growing semiconductor material, involves pressing commercial three-dimensional foam metal into thin sheet.

HAO Y, NING J, WANG D, ZHANG J, LU Q, MU M

Asymmetric super capacitor used as energy storage element, has positive electrode containing three-dimensional single pore graphene/manganese tetroxide composite, and electrolyte containing sodium sulfate.

HAO Y, NING J, WANG D, ZHANG J, LU Q, MU M, FENG X

Production of composite electrode material for preparing composite electrode for e.g. battery, involves immersing three-dimensional graphene in mixed solution of nickel chloride and urea, growing, rinsing and vacuum-drying.

HAO Y, NING J, WANG D, ZHANG J, LU Q, MU M

Growing method of aluminum nitride layer and gallium nitride layer on graphene by magnetic sputtering involves supplying hydrogen to quartz tube furnace containing clean copper tube, cooling and obtaining graphene.

CHEN Z, HAO Y, ZHANG J, LV J

Growing gallium nitride with silicon graphene using magnetron sputtering of aluminum nitride involves using chemical vapor deposition method and growing graphene on metal substrate, obtained product is placing in mixed solution.

CHEN Z, HAO Y, ZHANG J, LV J

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z

Preparing graphene quantum dot based on hypochlorite peroxide comprises ultrasonically dispersing solid graphite oxide, stripping graphite oxide monolayer, mixing hypochlorite aqueous solution and carrying out ultraviolet ray irradiation.

MA X, ZHOU X