国家/地区 美国（5）
IPC部 H（5） C（3） B（2）
IPC大类 H01（5） B82（2） C01（2）
IPC小类 H01L（5） B82Y（2） C01B（2）
IPC H01L021/02（3） H01L029/16（3） B82Y030/00（2）
B82Y040/00（2） C01B031/04（2）
发明人 ANDERSON T（2） FEYGELSON B N（2） KUB F J（2）
公开年 2013（3） 2014（2）
申请年 2013（5）
专利权人 US SEC OF NAVY（5）

Resonant tunneling graphene device of graphene resonant tunneling transistor, has transport barriers that cause set of electrons from electron source to be transmitted through central ribbon section by resonant tunneling.

GUNLYCKE L D, WHITE C T

Method of introducing bandgap in single layer graphite on silicate substrate used for nanocircuit design, involves preparing graphene flakes and chemical vapor deposition grown graphene films and performing hydrogenation of graphene.

BALDWIN J W, MATIS B R, BURGESS J S, BULATJARA F, FRIEDMAN A L, HOUSTON B H

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, by subjecting sample to ex situ functionalization step, and subjecting sample having hydroxide terminated surface to in situ treatment.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Forming graphene on surface, comprises forming material substrate, depositing carbon-containing material layer or metal material layer, applying heating/cooling cycle, cooling carbon material layer and removing material and carbon layers.

KUB F J, ANDERSON T, FEYGELSON B N

Forming graphene material (on surface) used e.g. as gate electrode, comprises depositing metal material layer e.g. nanoparticle metal material on material substrate, applying heating cycle, introducing carbon atoms and continuing cycle.

KUB F J, ANDERSON T, FEYGELSON B N