国家/地区 美国（6）
IPC部 H（6） B（2）
IPC大类 H01（6） B82（2）
IPC小类 H01L（5） B82Y（2）
IPC H01L029/16（3） H01L021/02（2） H01L029/06（2）
发明人 KUB F J（3） ANDERSON T J（2）
公开年 2014（6）
申请年 2014（4）  2013（2） 
专利权人 US SEC OF NAVY（6）

Linear cavity laser device, has graphene saturable absorber that operates as variable loss mechanism in optical cavity allowing population inversion if gain material exceeds lasing threshold without graphene.

KUB F J, CURRIE M

Ultraviolet and/or visible detector apparatus, has bottom side contact structure electrically connected to semiconductor structure and top side contact structure connected to second portion of upper surface of graphene layer.

ANDERSON T J, HOBART K D, KUB F J

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Graphene base transistor with reduced collector area, has base region in which base region has sheet of graphene, intermediates electron injection region and electron collection region, and forms electrical interfaces.

KUB F J, ANDERSON T J, KOEHLER A D

Resonant tunneling graphene device of graphene resonant tunneling transistor, has transport barriers that cause set of electrons from electron source to be transmitted through central ribbon section by resonant tunneling.

GUNLYCKE L D, WHITE C T

Method of introducing bandgap in single layer graphite on silicate substrate used for nanocircuit design, involves preparing graphene flakes and chemical vapor deposition grown graphene films and performing hydrogenation of graphene.

BALDWIN J W, MATIS B R, BURGESS J S, BULATJARA F, FRIEDMAN A L, HOUSTON B H