国家/地区 中国（8）
IPC部 H（5） B（3）
IPC大类 H01（5）
IPC小类 H01L（5）
IPC H01L031/18（3） H01L031/028（2） H01L031/0352（2）
发明人 SHAN D（8）
公开年 2022（4） 2018（2）
申请年 2022（4）  2018（2）  2019（2） 
专利权人 YANGZHOU POLYTECHNIC INST（8）

Connecting type graphene radiating fin, has field-shaped carrier whose surface is located around lower pressing frame that is rectangular and provided with set of pressing fixing mechanisms for pressing and fixedly graphene fin main body.

CHEN X, SUN D, WANG M, SHAN D

Graphene heat conducting film preparation device for use in e.g. mobile phone and aerospace, has first roller whose surface is provided with vent hole and dust collecting component connected with second roller.

CHEN X, WANG M, SUN D, CAO Y, SHAN D

Dispersing device for processing graphene, has suspension rod can move in square trajectory against inner wall of through-groove, and drive assembly which is utilized to drive stirring assembly, and agitated dispersion of mixture within stirring zone is achieved.

CHEN X, SUN D, WANG M, CAO Y, SHAN D

Adjustable electrically-biased suspended graphene field effect tube for use in terahertz wave band, has single-layer graphene that is arranged on surface of silicon dioxide (SiO2) substrate, where narrow channel position forms suspended arc-shaped surface structure.

WANG M, SUN D, CHEN X, YANG R, TANG M, CAO Y, SHAN D

Stacked silicon quantum dot heterojunction solar cell, comprises aluminum electrode layer vapor-deposited on n-type silicon substrate surface and graphene layer provided on p-type laminated film surface.

SHAN D, ZHOU S, TANG M, YANG R, CAO Y, QIAN S, QIU S, CHEN X

Flat film solar cell comprises aluminum electrode, phosphorus-doped amorphous silicon thin film, silicon carbide thin film interface layer, boron-doped nano silicon film forming nano resonant cavity, graphene layer, and gold electrode.

SHAN D, ZHOU S, TANG M, YANG R, CAO Y, QIAN S, CHEN X

Graphene/silicon structure solar cell manufacturing method, involves locating bottom electrode on lower surface of n-type silicon layer, and introducing oxide layer at Schottky junction interface to modify Schottky junction interface.

SHAN D, ZHOU S, CHEN X

Fermi-adjustable graphene hetero junction structure has graphene layer which is located on upper end portion of rectangular groove, and whose nanometer germanium thin film layer is provided with second rectangular ring shaped gold electrode.

SHAN D, CHEN X