国家/地区 韩国（4）
IPC部 C（3） H（3）
IPC大类 H01（3） C23（2）
IPC小类 H01L（3） C23C（2）
IPC C23C016/26（2） H01L021/768（2）
发明人 AHN S（4）
公开年 2022（3）
申请年 2021（3） 
专利权人 SAMSUNG ELEC.（2）

Semiconductor device, has first interconnection layer connected with first via and protruded upward from upper surface of insulating layer in direction, and interconnection structure provided with second via and second interconnection layer.

LEE W, JUNG D, LEE S J, AHN S, SHIN J, YOUNG J D

Semiconductor process wastewater treatment system used for removing ionic substances, has processing unit configured to receive semiconductor process wastewater and treat the semiconductor process wastewater through many operation and membrane filtration tank arranged separately from processing unit.

CHA M, KIM S, PARK C, AHN S, SEHYUK A, PARK C H, KIM S Y

Method for forming interconnect structure for semiconductor devices, involves forming carbon layer having bonding structure on first metal layer of substrate, and forming second metal layer of substrate electrically connected to first metal layer.

LEE Y, SHIN H, SHIN J, BYUN K, LEE W, AHN S, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE Y S, SHEN X, LI Y

Depositing a graphene film involves supplying a gaseous-phase graphene source to a substrate, adsorbing the graphene source to form an adsorbed layer on the substrate, and activating the adsorbed layer by heating the adsorbed layer.

AHN S, KANG S Y