国家/地区 中国（5）
IPC部 B（3） C（3）
IPC大类 B01（3） C07（3）
IPC小类 B01J（3） C07D（3）
IPC C07D307/60（3） B01J027/198（2）
发明人 AN X（5）
公开年 2021（5）
申请年 2019（3）  2020（2） 
专利权人 CHINA PETROL.（3） SINOPEC BEIJ.（3）

Non-doped semiconductor device for system on chip (SoC), has planar memory device which is two-dimensionally integrated with memory unit cells having layer of non-doped semiconductor channel material, and SoC that comprises non-memory unit.

AN X, QIU C, XU L

Catalyst useful for preparing phthalic anhydride by naphthalene oxidation, comprises carrier, active component and heat conducting material.

AN X, LIU Y, YUAN B, SHI H, ZHANG D, ZHANG Z, FENG Y, DONG Y

Catalyst useful for preparing phthalic anhydride by oxidation of o-xylene, comprises carrier, vanadium, phosphorus and cesium compound, auxiliary agent comprising e.g. at least one of rubidium, cerium or niobium and heat-conducting material.

AN X, YUAN B, LIU Y, SHI H, ZHANG D, ZHANG Z, FENG Y, DONG Y

Catalyst useful for oxidation of benzene to maleic anhydride, comprises catalyst carrier, active component and heat-conducting material.

ZHANG D, SHI H, ZHANG Z, FENG Y, AN X, LIU Y, YUAN B

Detecting thrombin content comprises drawing fluorescence standard curve of thrombin, mixing sample solution to be tested and DNA containing aptamer, incubating and calculating content of thrombin in sample solution.

AN X, ZHANG A, ZHANG B