国家/地区 美国（4）
IPC部 H（4） C（2）
IPC大类 H01（4） C01（2） C23（2）
IPC小类 H01L（4） C01B（2） C23C（2）
IPC H01L021/02（3） C01B032/186（2） C23C016/26（2）
发明人 AN X（4）
公开年 2023（2）
申请年 2022（2） 
专利权人 SAMSUNG ELEC.（3）

Hard mask film used in etching process for manufacturing semiconductor device, comprises first graphene layer, first amorphous carbon layer on first graphene layer, second graphene layer on first amorphous carbon layer, and second amorphous carbon layer on second graphene layer.

KIM Y, OH S, AN S, AHN S J, OH S R, KIM Y U, AN X

Fabricating semiconductor device involves loading substrate with structure having opening, into process chamber, forming two-dimensional material layers on upper surface of structure, to overlie opening and form air-gap, where upper portion of air-gap, is defined by two-dimensional material layers.

SHIN K, LEE S, YOON J, AN S, LI Z, YOUN J, AN X, AHN S J, SU Y J, LEE S Y, SHIN K W

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Photodiode device operating method involves exposing photodiode device having monolayer of carbon-based material such as graphene, and layer of n-doped semiconductor material such as silicon, to electromagnetic radiation.

AN X, LIU F, KAR S