国家/地区 中国（6） 韩国（2）
IPC部 H（5） C（4） B（2）
IPC大类 H01（5） C09（2） C23（2）
IPC小类 H01M（4） C23C（2）
IPC H01M004/36（3） H01M004/38（2） H01M004/62（2）
H01M010/0525（2）
发明人 CHANG K（7）
公开年 2022（7）
申请年 2022（3）  2020（2）  2021（2） 
专利权人 SHANGHAI YUL.（2）

Laser contacting process used for bonding semiconductor elements, involves controlling amount of laser light absorbed by laser control structure, and bonding contacting sections and contacting object.

JANG K S, EOM Y S, CHOI G, CHOI K, JOO J, MOON S, LEE C, CHANG K S, MUN C K, JOO J H, MOON S H, LEE C M, WEN S, ZHU Z, CUI G, YAN L, CHANG K

Preparing high-rate three-dimensional porous silicon-niobium-based oxide composite thin film cathode material involves mixing graphene water-based slurry and binder, dispersing, coating slurry on three-dimensional porous current collector material, vacuum drying, co-sputtering with elemental silicon.

WANG J, CHANG K, WAN W, ZHOU H, LIU P

Preparing two-dimensional sheet composite material modified by riboflavin sodium phosphate useful for preparing aqueous epoxy anticorrosive coating, comprises e.g. mixing sodium ribofluorophosphate, and water to form uniform mixing system, and intercalating.

CHANG K, MAO F, LU G, LIU S, ZHAO H, YU Y, LI M, XIAO L, SHEN X, WANG J

New graphite-doped anode material useful for high-performance power lithium battery assembly.

CHANG K

New platinum-containing compound useful in precursor composition for producing platinum-containing thin film.

CHANG K, SHIN H S, PARK T J, KWON S H

Preparing three-dimensional porous silicon/graphene composite cathode material used in lithium-ion battery, involves pretreating silica source by heating process, and dispersing sulfuric acid solution with graphene or graphene oxide.

CHANG K, XU H, WANG L, WAN W, LIU P

Preparing one-dimensional single crystal germanium-based graphene plasmon nanostructure in e.g. mid-infrared sensing, comprises sputtering gold nano-film on substrate, and growing high crystallinity graphene shell layer on surface of germanium doped single crystal nano-wire.

WANG H, GU Y, CHANG K, CHEN K