国家/地区 韩国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/02（2） H01L029/16（2） H01L051/00（2）
H01L051/05（2）
发明人 CHO B J（4）
公开年 2018（3）
申请年 2017（3） 
专利权人 KOREA ADVANCED SCI TECHNOLOGY INST（4）

Manufacturing method for graphene-silicone fusion electric circuit element, involves forming passivation oxide layer on upper portion of silicon transistor, and through-hole passing through the passivation oxide layer is formed.

CHO B J, HONG S K, KIM C S

Method of manufacturing graphene element e.g. FET, involves forming insulating film on portion of metal layer formed on upper portion of graphene exposed and forming another metal layer in portion of upper portion of insulating film.

CHO B J, SONG S M, BONG J H

Manufacturing method of graphene nanoribbon used for producing up gate-type FET, involves forming reaction inhibiting layer on graphitized metal catalyst thin film, and arranging carbon source to grow graphene nanoribbons.

CHO B J, HWANG W S, HONG S K, BONG J H

Graphene electronic device e.g. FET, has graphene channel layer formed on gate insulating layer, source electrode formed on end of graphene channel layer, and drain electrode formed on another end of graphene channel layer.

SONG H, CHO B, SEO S, SHIN W, SONG H J, CHO B J, SEO S A, SHIN W C, SONG C, SIN W