国家/地区 美国（4） 韩国（2）
IPC部 H（4） C（2）
IPC大类 H01（4） C23（2）
IPC小类 H01L（4） C23C（2）
IPC C23C016/26（2） H01L021/02（2） H01L029/40（2）
H01L029/417（2） H01L029/423（2） H01L029/66（2）
发明人 CHO Y（4）
公开年 2022（2） 2023（2）
申请年 2022（4）
专利权人 SAMSUNG ELEC.（4）

Semiconductor device has gate electrode, gate dielectric, channel layer with two-dimensional semiconductor material, where at location of gate electrode not vertically overlapping source and drain electrodes, height of gate electrode is defined from lowermost to uppermost surface of gate electrode.

SHIN H, CHO Y, SEOL M, LEE M

Semiconductor element used in various integrated circuit devices, has substrate comprising trench, source region, and drain region, where source region and drain region separated apart from each other by trench, gate insulating layer covering bottom surface and sidewall of trench, gate electrode.

CHO Y, BYUN K, KIM S, LEE E, BYUN K E, CHO Y C

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Acetylene fluid supply package for use in fabricating a semiconductor device, has pressure vessel, porous filler in the pressure vessel, improved solvent within the porous filler, where solvent solubilizing with acetylene absorbed within the improved solvent, improved solvent is triethyl phosphate.

HAN Y, CHUNG W, CHO Y, KANE W S, SONG X, SINHA A K, CHO Y J