国家/地区 韩国（4） 美国（4）
IPC部 B（4） H（3） C（2）
IPC大类 B82（4） H01（3） B32（2）
C01（2）
IPC小类 B82Y（4） H01L（3） B32B（2）
C01B（2） H01B（2）
IPC B82Y030/00（4） B82Y040/00（3） C01B031/02（2）
C01B031/04（2） H01B001/04（2）
发明人 CHOI W（4）
公开年 2012（4）
申请年 2011（3） 
专利权人 SAMSUNG ELEC.（3）

Preparing graphene used in e.g. LEDs, transistors involves treating graphite with acid to form graphite oxide, mixing with metal oxide nanoparticles; and treating with acid to separate graphene.

CHOI W K, PARK D H, KWON B W, SON D I, CHOI W

Forming multi-layer graphene involves forming stack of graphitizing metal catalyst layer and graphene by repeatedly forming the catalyst layer on substrate, and forming graphene on the catalyst layer; and removing the metal catalyst layer.

WOO Y, CHOI J, CHOI W, SHIN H, YOON S, WOO Y S, CHOI J Y, CHOI W M, SHIN H J, YOON S M

Semiconductor device e.g. transistor silicon-based MOSFET, for use as e.g. touch sensor in organic LCD device, has unit layers spaced apart from each other along vertical direction and including patterned graphene layers.

KIM S, CHOI W, JIN Y, KIM S K, JIN Y W

Transparent electrode, used in e.g. display device and solar cell, comprises graphene on one surface of transparent substrate, where graphene is doped with positive-dopant having specific molecular weight and transmittance variation rate.

YOON S, CHOI W, SHIN H, CHOI J, YOON S M, CHOI W M, SHIN H J, CHOI J Y