国家/地区 中国（4）
IPC部 B（2） C（2） H（2）
IPC大类 B82（2） H01（2）
IPC小类 B82Y（2） H01L（2）
IPC
发明人 CUI X（4）
公开年 2011（2） 2012（2）
申请年 2011（4）
专利权人 UNIV FUDAN（2） UNIV PEKING（2）

Carbon-based nanometer material transistor preparing method, involves leading electrodes at two ends of carbon nanometer tube, and depositing conductive material at two ends of graphene for forming electrode.

CAO Y, CUI X, ZHANG X, HUANG R, FU Y, ZHAO H, WEI Q, WEI Z, YIN J

Method for manufacturing graphene transistor, involves transferring graphene to upper part of groove structure of carbon nano-tube, and educing conductive materials deposited on two ends of graphene.

CAO Y, CUI X, FU Y, HUANG R, WEI Q, WEI Z, YIN J, ZHANG X, ZHAO H

Chemical method for preparing graphene used for industrialized application, involves preparing graphene oxide, adding oxalic acid crystal to resulting suspension liquid followed by heating, stirring, reacting, warming, washing and drying.

CUI X, SONG P, SUN M, ZHANG X

Preparing photoinduced hydrophobic film comprises taking graphite powder, preparing graphite oxide by Hummers oxidation, dispersing to obtain graphene oxide colloidal solution, preparing graphene oxide film on a solid surface and processing.

CUI X, SONG P, ZHANG X, SUN M