国家/地区 欧洲专利局（EPO）（2） 英国（2） 美国（2） 世界知识产权组织（2）
IPC部 C（4） H（3）
IPC大类 C01（3） H01（3） C23（2）
IPC小类 C01B（3） H01L（3） C23C（2）
IPC C01B031/04（3） H01L021/02（3） C23C016/26（2）
发明人 DONG G（4）
公开年 2013（4）
申请年 2012（2）  2013（2） 
专利权人 RIJKSUNIV LE.（4）

Formation of graphene film on surface of substrate for, e.g. lasers, involves locating carbon source at substrate surface, controlling ambient conditions to inhibit nucleation, and then initiating graphene nucleation at localized site.

DONG G

Forming graphene film (on surface of substrate) used in e.g. lasers, comprises locating carbon source at or in vicinity of surface, controlling ambient conditions, applying temporary change of condition at localized site and controlling.

DONG G

Method for forming graphene film used for e.g. flexible electronics application, involves heating copper-containing substrate, exposing substrate to carbon-containing precursor gas to dissolve carbon atoms into substrate, and cooling.

DONG G, VAN RIJN R

Forming graphene film on copper-containing substrate surface involves heating and exposing substrate to carbon-containing precursor gas and cooling to segregate dissolved carbon atom and selecting substrate to control graphene film depth.

DONG G, RIJN R V