国家/地区 美国（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（3）
IPC H01L021/336（3） H01L021/28（2） H01L029/16（2）
H01L029/66（2） H01L029/778（2） H01L029/78（2）
H01L029/786（2）
发明人 FARMER D B（4）
公开年
申请年
专利权人 INT BUSINESS.（4） IBM UK LTD（2）

Battery useful as a lithium-oxygen battery, comprises a lithium anode, an electrolyte having a high solubility for lithium ions and oxygen, and a thin graphene cathode formed on a substrate.

AKCA E, AKGUN C, DEMIRCI G, FARMER D B, HAN S, MAUNE H T, OH D

Method for forming graphene field-effect transistor (GFET), involves forming first graphene sheet, and coupling first gate layer to surface of first grapheme sheet to influence electric field of first grapheme sheet.

FARMER D B, FRANKLIN A D, OIDA S, SMITH J T

Graphene-based field effect transistor for high-frequency electronics, comprises graphene layer located on insulating layer, first and second metal portions, first and second electrodes, gate dielectric layer, and dielectric seed layer.

AVOURIS P, FARMER D B, LIN Y, ZHU Y, LIN Y M

Semiconductor device has complementary metal oxide semiconductor device layer that is in contact with source and drain, and gate are that connected to graphene channel respectively.

CHEN K, LIN Y, AVOURIS P, FARMER D B, FARMER D, CHEN K N, LIN Y M, KUANNENG C, YUMING L