国家/地区 中国（8）
IPC部 C（5） B（4） H（2）
IPC大类 B01（2） B05（2） C13（2）
H05（2）
IPC小类 B01J（2） B05C（2） B05D（2）
C13K（2） H05B（2）
IPC B01J027/02（2） B05D003/02（2） C13K001/02（2）
H05B003/14（2）
发明人 FUGETSU B（8）
公开年 2016（2） 2017（2） 2018（2）
申请年 2014（3）  2017（3） 
专利权人 GUONENG NANO.（3） MATERIAL IN.（3） WEALTECH CO .（2）

Graphene-based flexible heating cable, has heating fiber provided with first thread, first fiber line orderly coated with outer side of conductive layer for generating PTC effect from inner side to outer side of resin layer.

ZONG X, XUE F, LI J, ZHANG C, YANG C, FUGETSU B

Aqueous graphene electro-thermal conversion film production equipment, has conductive medium printing device provided with conductive medium printing mechanism, drying device and telescopic control mechanism.

WANG Z, LIU C, ZHANG S, CHEN N, ZHANG X, FUGETSU B

Aqueous graphene electro-thermal conversion film production equipment, has drying device fixed with telescopic control mechanism, and pressing composite device provided with copper carrier fluid conveying mechanism.

WANG Z, LIU C, TIAN B, CHEN N, ZHANG X, FUGETSU B

Aqueous electro-thermal coating comprises aqueous dispersion resin, carbon nanotube, graphene and nano-carbon black.

ZHANG L, FUGETSU B, ZHI Y, ZHANG C, XUE F, ZONG X

Double-layer film comprises graphene layer and polymer layer, where electrical resistivity of graphene layer is lower than electrical resistivity of polymer layer, which is prepared by coating dispersion of graphene on base material.

CAO J, MENG X, HUANG M, SUN L, FUGETSU B

Preparing graphene-based carbon deposition structure interlayer solid acid catalyst e.g. purifying graphene, mixing with glucose, reacting with concentrated sulfuric acid to obtain interlayer solid acid catalyst.

FUGETSU B, JIANG D, WU J, SHI F, ZHANG X

Preparation of graphene surface carbide with embedded magnetic particle solid acid catalyst by purifying graphene using nitric acid or sulfuric acid, dissolving in sodium hydroxide and sodium nitrate, loading with iron oxide and glucose.

FUGETSU B, JIANG D, WU J, SHI F, ZHANG X

Preparation method of graphene used in semiconductors involves graphite oxidation, mixing with metal powder and resin, diluting in acid, reacting, electrolytic decomposing, filtering, washing and adding polyethylene pyrrolidone.

FUGETSU B, JIANG D