国家/地区 美国（4）
IPC部 H（4） B（2）
IPC大类 H01（4） B82（2）
IPC小类 H01L（4） B82Y（2）
IPC H01L021/20（4） B82Y040/00（2） H01L029/06（2）
H01L029/16（2） H01L029/78（2）
发明人 GRILL A（4）
公开年 2012（4）
申请年 2011（4）
专利权人 INT BUSINESS.（4）

Semiconductor structure e.g. dual-channel finFET, has graphene nanoribbon located on bare sidewall of silicon carbide fin, where portion of graphene nanoribbon overlapped by gate structure defines channel region of structure.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A, COHEN G, DIMITRAKOPOULOS C

Semiconductor structure, useful in semiconductor device (diodes and bipolar-complementary metal-oxide-semiconductor devices), comprises a silicon carbide substrate, and a graphene layer located on upper surface of silicon carbide substrate.

DIMITRAKOPOULOS C D, GRILL A, MCARDLE T J, OTT J A, WISNIERFF R L

Semiconductor structure for electronic integrated circuit, has dielectric material including conductive region that is in contact with conductive element of graphene containing semiconductor device.

DIMITRAKOPOULOS C D, COHEN G M, GATES S M, GRILL A, MCARDLE T J, SUNG C

Semiconductor substrate for e.g. forming semiconductor structure comprises substrate having upper surface and ordered array of parallel graphene nanoribbons located on the upper surface of the substrate.

DIMITRAKOPOULOS C D, GRILL A, MCARDLE T J