国家/地区 美国（4）
IPC部 H（4） B（2）
IPC大类 H01（4） B82（2）
IPC小类 H01L（4） B82Y（2）
IPC H01L029/06（3） H01L029/66（3） H01L029/775（3）
B82Y010/00（2） B82Y040/00（2） B82Y099/00（2）
H01L021/02（2） H01L021/28（2） H01L029/10（2）
H01L029/16（2） H01L029/78（2） H01L051/00（2）
H01L051/05（2）
发明人 GRILL A（4）
公开年 2014（4）
申请年 2013（2）  2014（2） 
专利权人 INT BUSINESS.（4）

Device structure e.g. graphene device structure has spaced apart contact with portion on metal layer and insulating substrate, first patterned carbon-based nanostructure layer with regions are not covered by first patterned metal layer.

CHU J O, DIMITRAKOPOULOS C D, GRILL A, MCARDLE T J, PFEIFFER D, SAENGER K L, WISNIEFF R L

Method for forming interconnect structure for integrated microelectronic circuit, involves forming graphene cap directly on uppermost surface of copper structure.

BONILLA G, DIMITRAKOPOULOS C D, GRILL A, HANNON J B, LIN Q, NEUMAYER D A, OIDA S, OTT J A, PFEIFFER D

Semiconductor structure has graphene nanoribbon in which portion overlapped by gate structure defines channel region of semiconductor structure.

COHEN G, DIMITRAKOPOULOS C D, GRILL A

Manufacture of semiconductor structure used as device channels, involves forming silicon carbide fin having at least bare sidewalls on surface of substrate, forming graphene nanoribbon on each bare sidewall of silicon carbide fin.

COHEN G M, DIMITRAKOPOULOS C D, GRILL A