国家/地区 中国（6） 世界知识产权组织（3） 韩国（2）
IPC部 C（6） B（3）
IPC大类 C01（4） B01（2）
IPC小类 C01B（4） B01J（2）
IPC B01J003/06（2） B01J006/00（2） B01J019/10（2）
C01B031/04（2） C01B031/06（2） C01B032/194（2）
C01B032/198（2）
发明人 HAN D（8）
公开年 2017（6） 2016（2）
申请年 2016（8）
专利权人 ILJIN DIAMON.（2） JINAN SHENGQ.（2） UNIV PEKING（2）

Preparing high electromagnetic shielding effectiveness graphene/polymer composite multilayer structure material comprises e.g. preparing graphene oxide solution using liquid stripping method, and preparing reduced graphite oxide airgel film.

BAI S, HAN D, ZHANG Y

Graphene composite material used in foodstuffs packaging and pharmaceutical applications, comprises nanocellulose and graphene material in which portion(s) of nanocellulose is provided between graphene materials.

ZHANG J, LIU D, ZHENG Y, WANG P, HAN D, TANG Y, XU R

Preparing modified graphene comprises e.g. using graphene-like material under action of (2,2,6,6-tetramethylpiperidinyloxy) catalytic oxidation system, carrying out catalytic oxidation reaction, terminating the reaction, washing and drying.

ZHANG J, LIU D, ZHENG Y, WANG P, HAN D

Preparing nano cellulose comprises adding graphene-like material in aqueous cellulose solution during the grinding process to obtain nano-cellulose aqueous solution.

ZHANG J, LIU D, WANG P, HAN D

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce unreacted graphite, immersing sintered component in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Manufacture of graphene for electronic application, involves sintering metal and graphite powder to produce component containing unreacted graphite, immersing in strong acid, peeling graphite in mixture and reducing recovered graphene oxide.

OH C, LEE H Y, JANG K I, LEE H W, HAN D Y, KIM M S, CHUL O, HYOONG Y L, KANG I J, HYUN W L, HAN D, KIM M

Fiber-reinforced ceramic matrix composite comprises carbon fibers, carbon nanotubes, graphene and outermost silicon carbide substrate layer, where external surface of carbon nanotubes and graphene is coated with carbon fiber.

CHENG L, HAN D, MEI H, XIAO S

Radiation sensitive site effect transistor, has source electrode connected with leakage electrode, and insulation channel layer arranged with silicon dioxide layer that is coated with graphene film.

HAN D, WANG Y, ZHAO F, CONG Y, DONG Z, LUN Z, ZHANG X