国家/地区 美国（5）
IPC部 C（4） B（3） H（2）
IPC大类 C01（4） H01（2）
IPC小类 C01B（4） H01L（2）
IPC C01B032/186（2）
发明人 HAN Z（5）
公开年
申请年 2021（2） 
专利权人 CENT NAT REC.（2） SK HYNIX INC（2）

Semiconductor device comprises interconnection structure comprises seed layer disposed on first conductive layer, seed layer including graphene; and metal migration barrier layer disposed on seed layer, metal migration barrier layer including MXene.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Electronic device e.g. resistance change RAM, has proton conductive layer formed on the channel layer, hydrogen source layer formed on proton conductive layer, and gate electrode layer formed on hydrogen source layer.

HAN J H, KOO W T, HAN Z, KOO W, TAE K W

Catalyst used for ammonia dehydrogenation, comprises support comprising monocrystalline material having hexagonal structure, and catalyst metal supported on support.

JO Y S, CHA J Y, JEONG H S, KIM Y M, SOHN H T, YOON S P, NAM S W, LEE T J, YOON C W, HAN J H, YOUNGSEOKCHO, CHA J, JEONG H, SONHYUNTAE, YOON S, NAM S, TAIKJIN L, YUN C, HAN Z, YOON C, LI Z, SOHN H, JIN R, CAO Y

Apparatus used to form graphene layer comprises reaction chamber containing support layer, heating element to heat the support layer, and control device configured to control the formation of graphene layer on surface of support layer.

BOUCHIAT V, CORAUX J, HAN Z

Forming graphene layer involves heating support layer in reaction chamber; and forming graphene layer on surface of support layer by introducing organic compound gas and then introducing carbon etching gas into the reaction chamber.

BOUCHIAT V, CORAUX J, HAN Z