国家/地区 日本（4） 中国（2） 欧洲专利局（EPO）（2） 美国（2）
IPC部 C（3） H（2）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3） H01L（2）
IPC C01B031/04（3） H01L021/02（2） H01L021/20（2）
发明人 HASHIMOTO A（4）
公开年 2009（2） 2010（2）
申请年 2007（2）  2010（2） 
专利权人 OKI DATA COR.（2） OKI DATA KK（2） OKI DIGITAL .（2） UNIV FUKUI（2）

Releasing graphene layer from substrate, comprises forming graphene layer on surface of first substrate, forming metal layer on a surface of graphene layer and applying a pulling force on the metal layer to detach graphene layer.

OGIHARA M, SAGIMORI T, SAKUTA M, HASHIMOTO A, TANAKA S, OGIWARA M, MITSUHIKO O, TOMOHIKO S, MASAAKI S, AKIHIRO H

Separating nitride semiconductor layer from substrate to manufacture nitride semiconductor device and wafer, by growing graphene layer in form of single layer/layers on surface of substrate and forming semiconductor layer on graphene layer.

OGIHARA M, SAGIMORI T, SAKUTA M, HASHIMOTO A, OGIWARA M, WASHIMORI T, MITSUHIKO O, TOMOHIKO S, MASAAKI S, AKIHIRO H

Manufacture of graphene sheet for use in fuel cells, involves forming catalyst metal layer(s) on substrate, heating substrate, and supplying carbon-containing gas, making height of metal layer from substrate as film thickness.

HASHIMOTO A

Manufacture of graphene sheet for display, involves positioning graphene sheet formation surface containing carbon on substrate, preventing roundness of sheet, and removing components other than carbon of surface by heating.

HASHIMOTO A, TANAKA S