国家/地区 中国（4）
IPC部 H（3） G（2）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC
发明人 HE J（4）
公开年 2018（2）
申请年 2018（2） 
专利权人 NAT CENT NANOSCIENCE TECHNOLOGY CHINA（4）

Top floated gate Van der Waals heterojunction device, comprises hexagonal boron nitride nanosheet and graphene nanosheet sequentially stacked on molybdenum disulfide bottom electrode device.

HE J, HUANG W, YIN L

Quasi-Van der Waals contact structure based two-dimensional semiconductor device, has van der Waals contact structure provided with contact electrode, graphene nanosheet and metal that is stacked and evaporated on graphene nanosheet.

HE J, WANG J, WANG F

Asymmetric Waals heterojunction device for preparing e.g. transistors, comprises graphene nanosheets, hexagonal boron nitride nanosheets, molybdenum disulfide nanosheets and molybdenum molybdenum nanosheets.

HE J, CHENG R, WANG F

UV light detector zinc oxide/reduction-oxidation graphene composite nano material preparation method, involves performing reduction reaction on graphene oxide and zinc oxide by utilizing reducing agent.

WANG Z, HE J, WANG Y, ZHAN X, SAFDAR M