国家/地区 日本（4）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/336（3） H01L029/786（3）
发明人 IWAI D（4）
公开年 2009（2）
申请年 2007（3） 
专利权人 FUJITSU LTD（4）

Semiconductor device has graphene electrode, which is formed in two dimensional structure, where boron nitride semiconductor layer is coupled with graphene end of graphene electrode.

KONDO T, IWAI D

Package for mounting e.g. high power amplifier for mobile phone, has flexible carbon nanotube sheet that consists of graphene and carbon nanotube bundle on mounting surface of electronic device chip.

IWAI D, KONDO T

Electronic device manufacturing method involves regulating crystal orientation along extension direction of graphene and width of graphene with scanning probe microscope.

HIROSE S, IWAI D, OFUCHI M, OBUCHI M

Graphene transistor e.g. FET for high frequencies, has gate electrode that is formed while forming source electrode in one edge, and drain electrode on other edge of insulator.

HIROSE S, IWAI D