国家/地区 中国（3） 韩国（2）
IPC部 B（3） H（3） C（2）
IPC大类 H01（3） C08（2）
IPC小类 H01L（3） C08J（2）
IPC
发明人 JIN Y（5）
公开年 2012（3） 2011（2）
申请年 2011（5）
专利权人 SAMSUNG ELEC.（2） UNIV XIAN TE.（2）

Semiconductor device e.g. transistor silicon-based MOSFET, for use as e.g. touch sensor in organic LCD device, has unit layers spaced apart from each other along vertical direction and including patterned graphene layers.

KIM S, CHOI W, JIN Y, KIM S K, JIN Y W

Organic thin film transistor of electric device e.g. LCD, has graphene layers that are respectively positioned between source electrode and organic semiconductor layer, and between drain electrode and organic semiconductor.

LEE J Y, CHOI W M, JIN Y, KOO B W, CHOI J Y, SHIN H J

Graphene vertical interconnection structure manufacturing method, involves covering inner surface of vertical hole by insulating layer, and forming graphene-containing layer on insulation layer.

CHEN J, FANG R, JIN Y, MA S, MIU M, SUN X, ZHU Y

Preparing graphene oxide coating film used in food packaging, by coating colloid suspension of graphene oxide to surface of universal film, forming graphene oxide film and covering universal film on top layer of graphene oxide.

CHEN T, LI Z, REN P, JIN Y

Preparation of graphene oxide and polymer nanocomposite film, e.g. for food packaging, by adding graphene oxide into solvent, ultrasonically processing, adding polymer, processing, removing foams, and curtain-casting or blow-molding.

CHEN T, LI Z, REN P, JIN Y