国家/地区 中国（2） 韩国（2）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/768（2）
发明人 JIN Y（4）
公开年 2012（4）
申请年 2011（3） 
专利权人 SAMSUNG ELEC.（2） UNIV PEKING（2）

Semiconductor device e.g. transistor silicon-based MOSFET, for use as e.g. touch sensor in organic LCD device, has unit layers spaced apart from each other along vertical direction and including patterned graphene layers.

KIM S, CHOI W, JIN Y, KIM S K, JIN Y W

Organic thin film transistor of electric device e.g. LCD, has graphene layers that are respectively positioned between source electrode and organic semiconductor layer, and between drain electrode and organic semiconductor.

LEE J Y, CHOI W M, JIN Y, KOO B W, CHOI J Y, SHIN H J

Multi-layer graphene vertical interconnection structure manufacturing method, involves utilizing graphene layer for manufacturing catalyst layer, and utilizing catalytic layer for providing vertical hole filling effect.

CHEN J, FANG R, JIN Y, MA S, MIU M, SUN X, ZHU Y

Graphene vertical interconnection structure manufacturing method, involves covering inner surface of vertical hole by insulating layer, and forming graphene-containing layer on insulation layer.

CHEN J, FANG R, JIN Y, MA S, MIU M, SUN X, ZHU Y