国家/地区 韩国（6）
IPC部 B（5） C（5） H（3）
IPC大类 C01（4） C23（3） B01（2）
B82（2） H01（2）
IPC小类 C01B（4） C23C（3） B01J（2）
B82Y（2）
IPC C01B031/04（4） C01B031/02（3） C23C016/26（3）
B01J019/18（2） B82Y040/00（2）
发明人 JUNG M（6）
公开年 2014（3）
申请年 2013（2） 
专利权人 LG ELECTRONI.（5） JUNG M（2） MOON J（2）

Cell culture vessel used for applying electrical stimulation to cultured cells, comprises base substrate, graphene layer on base substrate, and culture substrate comprising electrostimulation input terminal coupled to working electrode to transmit electrical stimuli to deposited graphene layer.

CHO S, BAE B, JUNG M, CHO S G, JIN B B

Preparation of multi-doped graphene involves mixing metal-based dopant and at least one organic-based dopant to prepare doping solution, stacking graphene layer on substrate, and doping graphene layer with doping solution.

JUNG M, BYUN N, MOON J, MYNGHEE J, NAMI B, JINSAN M, WEN Z

Apparatus for manufacturing graphene comprises a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source, and a feeder for continuously supplying a catalyst metal.

MOON J, CHOI M, JUNG M

Manufacture of graphene electromagnetic wave blocking plate involves forming primary and secondary graphene layers above and below metal layer, attaching substrate on secondary graphene layer, forming pattern and removing substrate.

JUNG M, MOON J

Manufacture of graphene involves loading catalytic metal layer into chamber, applying tensile force to catalytic metal layer, supplying carbon source to chamber, applying tension, and forming graphene on catalytic metal layer.

MOON J, RHO J, PARK S, KIM T, HONG B, PARK W, JUNG M, KIM T H, ROH J

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S