国家/地区 日本（5） 台湾（2） 世界知识产权组织（2）
IPC部 C（5） H（4） B（2）
IPC大类 C01（5） H01（4） B82（2）
IPC小类 C01B（5） H01L（4） B82Y（2）
IPC C01B031/02（5） H01L021/336（4） H01L029/78（3）
B82Y030/00（2） B82Y040/00（2） C01B031/04（2）
H01L021/28（2） H01L021/285（2） H01L029/06（2）
H01L029/417（2）
发明人 KAWABATA A（5）
公开年 2013（2） 2014（2）
申请年 2012（2）  2013（2） 
专利权人 DOKURITSU GY.（4） FUJITSU LTD（2） NAT INST ADV.（2）

Graphene structure used for transparent electrode, comprises substrate, base which is formed on top of substrate, and vertical graphene which grows from base and stands in vertical direction with respect to surface of substrate.

KAWABATA A

Graphene-carbon nanotube structure for refinement of wiring in semiconductor device, has substrate, base formed on substrate, vertical graphene which grows from base, and stands in vertical direction with respect to substrate surface.

KAWABATA A

Electronic device consists of graphene structure supported on catalyst metal, which is formed on substrate with gap.

KAWABATA A

Electronic device e.g. metal oxide-Semiconductor field effect transistor, consists of graphene and carbon nanotube which are electrically connected through catalyst metal.

KAWABATA A

Manufacture of carbon nanotube used as semiconductor, involves supplying carbon raw material to metal catalyst having atomic arrangement of triangular lattice, and depositing graphene sheet of six membered ring structure.

AWANO Y, NARUTSUKA S, KAWABATA A, MARUYAMA T, NARIZUKA S, NARITSUKA S