国家/地区 韩国（4） 美国（4） 中国（2） 欧洲专利局（EPO）（2）
IPC部 H（4）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L021/02（4） H01L029/66（4） H01L029/16（3）
H01L021/20（2） H01L021/31（2） H01L029/06（2）
H01L029/778（2） H01L029/786（2）
发明人 KIM H（4）
公开年 2017（3）
申请年 2016（4）
专利权人 SAMSUNG ELECTRONICS CO LTD（4）

Method for forming multilayer graphene for e.g. stackable device, involves forming multilayer graphene on area of graphene at temperature by using source gas, where source gas used to form graphene is different from source gas.

HYOWON K, KIM H, KIM H W, JIN X

Method of intercalating insulating layer between metal catalyst layer and graphene layer in fabrication of semiconductor device, by intercalating nitrogen ions between metal catalyst substrate and graphene layer.

KO W, KIM H, KU J, JEON I, KO W H, KIM H W, KU J Y, JEON I S

Conductor, has nano pattern arranged on substrate, and graphene layer arranged over nano pattern that comprises set of linear structures extending in same direction and spaced apart from each other of set of linear structures.

JEONG S, KIM D, KIM H, KO W, KU J, RYU S, JEONG S J, KIM D G, KIM H W, KO W H, KU J Y, RYU S H

Method for fabricating transistor using stacked structure, involves intercalating material between graphene layer and metal layer by heating material at pressure and temperature different from another temperature to form insulating layer.

JEON I, KU J, KIM H, JEON I S, KU J Y, KIM H W, JIN X, QIU Z