国家/地区 韩国（5） 美国（3） 中国（2） 欧洲专利局（EPO）（2）
IPC部 C（4） H（2）
IPC大类 C01（3） H01（2）
IPC小类 C01B（3） H01L（2）
IPC C01B031/04（3） H01L021/02（2） H01L029/16（2）
H01L029/66（2）
发明人 KIM H W（5）
公开年 2016（5）
申请年 2015（4） 
专利权人 SAMSUNG ELEC.（3） UNIV HANYANG.（2）

Composite useful to produce energy storage element and separator for display device and sensor, comprising graphene oxide or reduced graphene oxide coated metal oxide nanoparticles and polymer.

HO B P, KIM H W, YOO B M, YOON J H, JANG S J

Method for fabricating transistor using stacked structure, involves intercalating material between graphene layer and metal layer by heating material at pressure and temperature different from another temperature to form insulating layer.

JEON I, KU J, KIM H, JEON I S, KU J Y, KIM H W, JIN X, QIU Z

Graphene structure has graphene layer which is provided on substrate, and is included with several convex portions of hollow structure.

KU J, KO W, KIM H, KU J Y, KO W H, KIM H W

Method of forming graphene layer for producing graphene-containing device e.g. diode involves forming graphene on region of underlayer using source gas and forming another graphene on another region using another source gas.

KIM H, LEE J, JIN X, KIM H W, LEE J H

Graphene-oxide film used for display device, semiconductor device, separation film, sensor, fuel cell, solar cell and lithium secondary battery, is coated with bile acid or its salts.

PARK H B, KIM H W, HO B P