国家/地区 韩国（5） 美国（3）
IPC部 B（5） C（4） H（4）
IPC大类 B82（5） H01（4） C01（3）
C08（2）
IPC小类 B82B（3） C01B（3） H01L（3）
B82Y（2） C08K（2） C08L（2）
IPC B82B003/00（2） B82Y030/00（2） B82Y040/00（2）
C01B031/02（2） C01B031/04（2） C08K003/04（2）
H01L021/205（2）
发明人 KIM J K（6）
公开年 2012（6）
申请年 2010（3）  2012（2） 
专利权人 KOREA INST S.（3） KOREA INST M.（2）

Graphene-polyurethane nanocomposite for applications such as conductive adhesive and composites for electrostatic and electromagnetic dissipation, comprises graphene, where graphene and polyurethane self-align into layers.

XIAO A Y, CAO J, LIU Y, KIM J K, ZHENG Q, ABOUTALEBI S H, GUDARZI M M, KIM J, ABOUTALEBI S, GUDARZI M, XIAO A

Fabricating graphene thin film involves making graphene by reducing graphene oxide using sulfonyl hydrazide-based reducing agent, forming graphene dispersed solution by dispersing graphene into organic solvent, and applying solution to film.

NA S I, KIM D Y, KOO H Y, YUN J M, YEO J S, KIM J K

Graphene-iron oxide complex, useful in purification filter for removal of heavy metals, comprises graphene and needle-like iron oxide nanoparticles grown on surface of the graphene.

KOO H Y, CHOI W S, KIM J K, YEONG G H, SAN CHOI W, GYEONG K J

Composition used for manufacturing graphene/polyimide electroconductive composites, comprises polyamic acid and graphene oxide.

LEE S H, NA S I, KU B C, KIM J K, HO L S, IN N S, CHEOL G B, GYEONG K J

Method for forming graphene pattern, involves locating metal layer at downward and outer side of removed oxide layer that is removes partial domain of oxide layer, and depositing exposure field graphene on chemical vapor deposition.

GWAN K J, HO J J, HYE L J, HYEOK C J, GEUN C D, DON K G, KIM J K, JEONG J H, LEE J H, CHOI J H, CHOI D G, KIM K D

Method for forming three-dimensional graphene pattern, involves laminating oxide layer in upper side of substrate, coating metal layer in exterior portion of oxide layer, and depositing graphene film in exterior portion of metal layer.

GWAN K J, HO J J, HYE L J, HYEOK C J, GEUN C D, DON K G, KIM J K, JEONG J H, LEE J H, CHOI J H, CHOI D G, KIM K D