国家/地区 韩国（4）
IPC部 C（3） G（2）
IPC大类 C01（3） G03（2）
IPC小类 C01B（3） G03F（2）
IPC C01B032/184（2） C01B032/194（2） G03F001/62（2）
发明人 KIM K S（4）
公开年 2022（3）
申请年 2022（3） 
专利权人 GRAPHENELAB CO LTD（4）

Method for manufacturing pellicle, involves forming upper silicon nitride layer on upper surface of wafer substrate, where pattern is formed on lower silicon n-nitride layer, and metal layer is formed in lower silicon nitride layer.

MOON S I, KWON Y, WOOK Y B, MOON J, KIM K S, LEE S M

Manufacturing graphene thin film for pellicle material using ozone gas useful in semiconductor devices comprises forming graphene on the upper surface of substrate, exposing graphene layer to ozone, and heat-treating and etching.

LEE G H, KWON Y, WOOK Y B, MOON S I, MOON J, KIM K S, LEE S M

Manufacture of shadow mask, involves forming buffer layer, depositing metal layer, forming amorphous carbon layer and crystalline carbon layer, removing amorphous carbon layer and metal layer, and separating buffer layer and crystalline carbon layer.

MOON S I, KWON Y, WOOK Y B, MOON J, KIM K S, LEE S M

Etchant composition to manufacture graphene with low sheet resistance, comprises sulfuric acid, hydrogen peroxide, purified water, N-heterocyclic aromatic compound e.g. benzotriazole, and aromatic boric acid e.g. phenyl boric acid.

MOON J, KWON Y, WOOK Y B, LEE S M, MOON S I, KIM K S, LEE G H, HYUN D, SIMSUJIN, SHIM S J, HYUN D S, YOO B W, KWON Y D, MOON J T