国家/地区 韩国（6）
IPC部 H（6） C（2）
IPC大类 H01（6）
IPC小类 H01L（5）
IPC H01L021/04（2） H01L029/16（2） H01L031/0224（2）
H01L031/028（2） H01L031/042（2） H01L031/18（2）
发明人 KIM S（6）
公开年 2014（6）
申请年 2013（4） 
专利权人 UNIV KYUNGHE.（3）

Graphene quantum dot optical detector, has graphene quantum dot layer formed with multiple graphene quantum dots and arranged with graphene layer, where graphene quantum dot layer removes moisture and solution in graphene layer.

CHOI S H, KIM S, KIM C O, SHIN D H

Manufacture of graphene counter electrode used for dye-sensitized solar cell, involves manufacturing graphene compound with nitrogen element, and surface-treating fluorine doped tin oxide transparent electrode with graphene compound.

KIM H, JU M, CHOI I, KIM S, KIM J, LEE J, BAEK J, JEON I, CHOI H, KIM H K, JU M J, CHOI I T, KIM S G, KIM J C, LEE J J, BAEK J B, JEON I Y, CHOI H J

Photo-detection device used for optoelectronic device, has n-type graphene and p-type graphene that are welded to p-n perpendicularity homogeneous vertical junction, and electrodes that are formed on light detection layer.

CHOI S H, KIM S, KIM C O, CHIO S, JIN C, KIM C

Graphene structure used in transparent electrode for display device or solar cell, comprises graphene doped with dopant, and hydrophobic organic layer on at least one surface of doped graphene.

YOON S, SHIN H, CHOI J, CHOI W, KIM S, LEE Y, CHOI J Y, CHOI W M, KIM S M, LEE Y H, SHIN H J, YOON S M, YOONSUNMI, HEE L

Coating composition for manufacturing transparent conductive film used as e.g. electromagnetic wave shielding film, comprises graphene oxide, polar solvent, and surface-treating agent which removes epoxide group from graphene surface.

YU K, LEE S, KIM K, LEE B, KIM S, KWAN T Y, SUNG H L, KYUNG E K, LEE B W, SEONG B K

Semiconductor device has highly resistive layer that is formed in boundary face of graphene, and electrodes that are formed respectively on substrate and arranged at lower portion of respective graphene.

CHOI S H, KIM S, SHIN D H