国家/地区 韩国（5） 美国（2）
IPC部 H（5） G（2）
IPC大类 H01（5） G02（2）
IPC小类 H01L（5） G02F（2）
IPC G02F001/136（2） H01L029/786（2）
发明人 KIM Y（6）
公开年 2012（3） 2013（3）
申请年 2011（6）
专利权人 GRAPHENE SQU.（2）

Manufacture of boron-doped graphene involves mixing boron compound and graphite, and heating mixture under argon atmosphere.

KIM Y, JUNG K Y

Thin film transistor comprises channel region electrically connected between source and drain electrodes that include self-assembled monolayer and graphene layer, where graphene layer is formed on monolayer.

HONG B H, KIM K E, PARK J, KIM Y

Organic field-effect element thin-film transistor used for display device, has single-layer graphene source electrode, single-layer graphene drain electrode, and organic semiconductor channel layer formed on plastic substrate.

HONG B H, KIM K E, KIM Y, PARK J S

Graphene power-mill system has graphene sheet that recovers to be flat portion after removing graphene pusher or graphene bender from groove, so as to reproduce electricity.

KIM K I, KIM S W, KIM Y

Semiconductor device, has substrate provided with pattern layer, graphene layer formed on pattern layer along predetermined direction, and film layer arranged between substrate and graphene layer, where graphene layer is provided with sheet.

LEE J K, KIM G T, KIM Y

Thin-film transistor substrate for liquid crystal displays comprises insulating substrate; passivation film with contact hole exposing portion of drain electrode; and pixel electrode formed of carbon composition of carbon nanotubes/graphene.

NING H L, JEONG C, PARK J, KIM S, CHO S, KIM Y, BYUN J, JEONG C O, PARK J Y, KIM S G, CHO S H, KIM Y H, BYUN J S