国家/地区 韩国（6） 美国（4）
IPC部 H（5）
IPC大类 H01（4）
IPC小类 H01J（2） H01L（2）
IPC H01J001/30（2） H01J001/304（2） H01J001/308（2）
H01J009/02（2）
发明人 KIM Y（6）
公开年 2015（6）
申请年 2014（4）  2013（2） 
专利权人 SAMSUNG ELEC.（3） KUMOH NAT IN.（2）

Manufacturing method for graphene radiation sheet, involves manufacturing oxide graphene and manufacturing surface modification graphene by pulverizing expanded graphite and treating graphene with acid for improving dispersion of graphene.

BYUN N, KIM Y, JUNG M

Composition useful in field effect transistor type gas sensor, comprises organic semiconductor and alkylated graphene oxide.

PARK C E, KIM Y, AN T K

Semiconductor device for electronic apparatus, has graphene layer that is disposed on and connects source and semiconductor element, and spaced apart from drain.

WENXU X, KIM Y, MOON C, PARK Y, YANG W, LEE J, KIM Y S, MOON C Y, PARK Y Y, YANG W Y, LEE J Y, LEE J H

Field emission device for use in lighting apparatus, has electron emission source that comprises multiple graphene thin films that are vertically supported in cathode electrode toward opening.

JEONG T, KIM I, KIM Y, LEE D, PARK S, LEE D G, PARK S H, KIM Y C, KIM I H, JEONG T W

Field emission device for electronic apparatus has insulating spacer that forms opening that is path of electrons emitted from electron emission source, and gate electrode with graphene sheet that covers opening.

LEE D, PARK S, KIM Y, LEE C, KIM D, LEE D G, PARK S H, KIM Y C, LEE C S, KIM D Y

Donor substrate for laser transfer, has intermediate layer arranged on light-to-heat conversion layer, where light-to-heat conversion layer comprises graphene.

KWON J, YOON J, PYO S, SONG H, YOO B, LEE B, YE J, KIM Y, KWON J Y, YOON J H, PYO S W, SONG H J, YOO B W, LEE B S, YE J M, KIM Y S