国家/地区 韩国（4）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC H01L021/027（2）
发明人 KIM Y N（4）
公开年 2014（4）
申请年 2012（4）
专利权人 INTELLECTUAL.（3）

Monitoring of surface of graphene for polymer-residue inspection, involves attaching support film to graphene film formed on substrate, and dyeing support thin film by ionization of coloring agent which exhibits more than one color.

KIM H K, KIM Y N, YANG W S

Method for manufacturing graphene pattern used in e.g. FET, involves generating evaporation-induced self assembly above pattern formation jig, such that soluble pattern is formed on graphene.

YANG W S, KIM H K, KIM T Y, KWON S W, KIM Y N, PARK W K, JANG A R, SHIN H S, YOON D H, SUH K S

Manufacture of field effect transistor involves arranging pattern-forming fixture on substrate on which graphene is formed, generating evaporation-induced self assembly, forming graphene patterns, dielectric layer and gate electrode.

YANG W S, KIM H K, KIM T Y, KWON S W, KIM Y N, PARK W K, JANG A R, SHIN H S, YOON D H, SUH K S

Manufacturing device of graphene pattern used in e.g. FET, has jig conveying unit that is provided for transferring solute pattern above pattern formation jig with evaporation-induced self assembly.

YANG W S, KIM H K, KIM T Y, KWON S W, KIM Y N, PARK W K, JANG A R, SHIN H S, YOON D H, SUH K S