国家/地区 韩国（6） 美国（2）
IPC部 H（5） B（4） C（3）
IPC大类 H01（5） C01（2）
IPC小类 H01L（5） C01B（2）
IPC H01L029/786（3） C01B031/02（2） H01L029/78（2）
发明人 KIM Y S（6）
公开年 2013（4） 2014（2）
申请年 2012（6）
专利权人 SAMSUNG ELEC.（3）

Thermal-conductive heat-radiation heat-resisting graphene coated component has protective film and coating layer having multilayered structure containing mixture of graphene and graphite particles, in specified weight ratio.

KIM Y S, AHN G H

Manufacture of graphene involves supplying process gas containing carbon source on substrate, and pre-processing substrate using oxidative gas plasma to form graphene layer on substrate.

CHUN S H, KIM Y S

Manufacturing method of graphene carbon material electric component e.g. thin-film transistor, involves forcing graphene oxide layer in post heat cycle for forming integrally drain and source electrodes and channel layer in same plane.

KIM Y S, CHOI H S, LEE G H

Semiconductor light emitting device e.g. LED has transparent electrode which is made of graphene layer and contact layer, and active layer which is formed between n-type and p-type nitride semiconductor layers.

SHIM H W, KIM Y S, KIM S T

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Graphene transferring element for high radio frequency device, has metal thin-film layer pattern and graphene layer stacked on adhesive part, where metal thin- film layer pattern and graphene layer have same shape.

LEE J, LEE C, KIM Y, SONG H, HO L J, SEUNG L C, SEONG K Y, JAE S H, LEE J H, LEE C S, KIM Y S, SONG H J