国家/地区 韩国（4） 美国（2）
IPC部 H（4） C（2）
IPC大类 H01（4） C01（2）
IPC小类 C01B（2） H01L（2）
IPC C01B031/04（2）
发明人 KIM Y S（4）
公开年 2016（2） 2017（2）
申请年 2016（4）
专利权人 SAMSUNG ELEC.（3）

Graphene substrate useful in transistor as electronic device, comprises a substrate having an adhesion force, a graphene layer provided on the substrate and a dielectric layer provided on the graphene layer.

JEONG S J, KIM H S, KIM Y S, PARK S J, KIM H J, SEOL D H, YANG J H

Method for fabricating graphene nano-mesh in e.g. transparent display device, involves forming graphene nano-mesh including openings by etching oxide layer, and transferring graphene nano-mesh onto substrate after removing catalyst layer.

LEE J, KIM Y, LEE C, LEE J H, KIM Y S, LEE C S

Method for manufacturing optical transmitting integrated module by using phosphorus graphene protection copper, involves fixing vertical cavity surface emitting laser chip in vicinity of surface plasmon grating pattern.

JEON E K, LEE J J, KANG H S, KIM D S, KIM J E, LIM K S, HEO Y S, YU H Y, KIM Y S

Phase change memory device for use in integrated circuits, has graphene layer formed on lower electrode, phase change material layer formed on graphene layer and insulating layer, and upper electrode placed on phase change material layer.

KIM Y, AHN C, SOOD A, POP E, WONG H S P, GOODSON K E, FONG S, LEE S, NEUMANN C M, ASHEGHI M, KIM Y S, AHN C Y, LEE S H, WONG H P