国家/地区 日本（5）
IPC部 H（4） B（3） C（3）
G（2）
IPC大类 H01（4） C01（3） B82（2）
C30（2） G01（2）
IPC小类 H01L（4） C01B（3） B82Y（2）
C30B（2） G01J（2）
IPC H01L051/05（3） H01L051/30（3） B82Y020/00（2）
B82Y040/00（2） C01B032/186（2） G01J001/02（2）
H01L021/336（2） H01L029/786（2） H01L031/08（2）
发明人 KONDO O（5）
公开年 2022（4）
申请年 2021（5） 
专利权人 FUJITSU LTD（5）

Producing multilayer graphene, involves synthesizing multilayer graphene from carbon source using iron-chromium alloy film as catalyst.

HAYASHI K, KONDO O

Graphene element used as field effect transistor having top gate structure, comprises boron nitride layer having turbostratic structure, and graphene layer in contact with boron nitride layer.

KONDO O

Optical element comprises substrate, multilayer graphene provided on substrate, electrode connected to multilayer graphene, and another electrode connected to multilayer graphene.

KONDO O

Electronic device e.g. electronic apparatus, has island-like insulating film that is provided to cover second region which is adjacent to second surface of graphene in first region covered with first electrode.

ASO H, KONDO O, HAYASHI K, SUDA S

Photosensor device for use in automatic doors, security camera systems, and inspections of infrastructure, comprises passivation layer provided with openings that communicate with holes, where side surfaces of holes and inner walls of openings are continuously covered with insulating thin film.

KONDO D, NORIMATSU M, KONDO O