国家/地区 韩国（4） 美国（4）
IPC部 H（4） B（2）
IPC大类 H01（4）
IPC小类 H01L（4）
IPC H01L029/786（4） H01L021/336（3） H01L029/16（3）
H01L029/66（3） H01L029/78（3） H01L029/423（2）
H01L029/778（2）
发明人 LEE C（4）
公开年 2013（4）
申请年 2012（4）
专利权人 SAMSUNG ELEC.（4）

Making graphene semiconductor device/diode used in organic light emitting display, comprises forming transfer substrate on semiconductor layer, forming laminates to separate sacrificial substrate from layer, and removing transfer substrate.

LEE C S, KIM Y B, YUN Y J, KIM Y S, SEO D, LEE J H, KIM Y, LEE J, LEE C

Manufacturing graphene electronic device involves making metal compound layer and catalyst layer on substrate, growing graphene layer on the catalyst layer, and converting the catalyst layer into a portion of the metal compound layer.

LEE C S, KIM S W, PARK S J, SEO D, YUN Y J, LEE Y H, LEE C, PARK S, YUN Y

Graphene device such as transistor comprises channel layer having graphene on substrate; source electrode on first region of channel layer; drain electrode on second region of channel layer; capping layer; gate insulating layer; and gate.

XIANYU W, MOON C, LEE J, LEE C, WENXU X, MOON C Y, LEE J Y, LEE C S

Graphene transferring element for high radio frequency device, has metal thin-film layer pattern and graphene layer stacked on adhesive part, where metal thin- film layer pattern and graphene layer have same shape.

LEE J, LEE C, KIM Y, SONG H, HO L J, SEUNG L C, SEONG K Y, JAE S H, LEE J H, LEE C S, KIM Y S, SONG H J