国家/地区 欧洲专利局（EPO）（7）
IPC部 H（7） B（3）
IPC大类 H01（7） B82（3）
IPC小类 H01M（4） B82Y（3） H01L（3）
IPC H01M004/36（4） H01M004/62（4） H01M010/052（4）
B82Y040/00（3） H01M004/02（3） H01M004/13（3）
H01M004/38（3） H01M004/66（3） H01M010/0525（3）
H01L021/02（2） H01L021/36（2） H01L029/06（2）
H01L033/00（2） H01L033/02（2） H01L033/12（2）
发明人 LEE D（7）
公开年 2012（2） 2022（2）
申请年 2011（2）  2021（2） 
专利权人 AN S（2） KIM S（2） KUMOH NAT IN.（2） LEE D（2）
LG SILTRON I.（2） SAMSUNG ELEC.（2） SK SILTRON C.（2）

Electrode used in lithium battery, has electrode active material layer that is measured by surface and interfacial cutting analysis system (SAICAS), and ratio of change of vertical relative force (FVR) between first and second points.

LEE D, NAM H, NAM J, KWON I, LEE J, LEE J H, NAM J H, LEE D K, KWON I K, LEE D G, LI D, NAN C, QUAN Y

Positive electrode used for lithium-sulfur battery, comprises current collector and positive electrode active material layer arranged on surface of current collector, where positive electrode active material layer comprises positive electrode active material and additive.

LEE D, KIM T G, UK L D, JIN Z, LI D

Cathode pole piece for use in electrochemical device, has first cathode framework layer located between current collector and second layer, where porosity of first layer is greater than that of second layer.

XIE Y, LI D, CHEN M, LEE D, XIE Y S

Anode material for secondary battery used in electronic device has graphene foam structure that includes graphene frames connected to each other, and nanostructures in pores of graphene foam structure.

SHIN H, LEE D, PARK S, SHIN H J, LEE D W, PARK S J

Graphene device used for electronic apparatus e.g. semiconductor device, consists of active layer, graphene layer, and electrode spaced apart from graphene layer and controls work function of graphene layer based on applied voltage.

SHIN H, BYUN K, SONG H, PARK S, SEO D, WOO Y, LEE D, LEE J, CHUNG H, HEO J, YOO I, SHIN H J, BYUN K E, SONG H J, PARK S J, WOO Y S, LEE D W, LEE J H, CHUNG H J, HEO J S, YOO I K, JIN S H, EUN B G, JAE S H, JUN P S, SEOK S H, SEONG W Y, GYEONG Y I, UK L D, HO L J, JONG J H, SEONG H J, HUI D, HUH J, YEO R, JUNG H

Compound semiconductor manufacturing method, involves forming graphene-derived material layer on selected substrate, and connecting compound semiconductor layer to graphene-derived material layer.

AN S J, LEE D G, KIM S H, AN S, LEE D, KIM S

Compound semiconductor device for light emitting device i.e. LED, has oxidation graphene layer provided with oxidation graphene sheets on part of surface of substrate, and buffer layer arranged between substrate and semiconductor layer.

AN S J, LEE D G, KIM S H, LEE D K, AN S, LEE D, KIM S