国家/地区 日本（7）
IPC部 H（7） C（6） B（4）
IPC大类 H01（7） C01（6） B82（4）
C23（3） B05（2）
IPC小类 C01B（6） H01L（4） B82B（3）
C23C（3） H01B（3） B05D（2）
B82Y（2） H01M（2）
IPC C01B031/04（4） B82B001/00（3） B82B003/00（3）
C23C016/26（3） H01B001/04（3） H01L021/02（3）
H01L021/20（3） B05D003/00（2） B82Y040/00（2）
C01B031/02（2） C01B032/182（2） C01B032/186（2）
H01L021/205（2） H01M004/36（2） H01M004/38（2）
发明人 LEE E（7）
公开年 2011（2） 2012（2） 2021（2）
申请年 2010（2）  2019（2） 
专利权人 SAMSUNG ELEC.（5） UNIV SUNGKYU.（2） UNIV SUNGKYU.（2）

Silicon-silicon composite oxide-carbon composite used for negative electrode active material for lithium secondary battery, comprises core-shell structure comprising core comprising silicon, silicon oxide compound, and magnesium silicate, and shell comprising carbon layer, and has preset span value.

LEE E, PARK H, LIM S W, OH S M, LIM J C, HUNSOO P, IMSUNGWOO, LIM J

Prediction of life characteristics of secondary battery for e.g. robots, involves e.g. charging and discharging of target secondary battery containing carbon-based hybrid negative electrode containing carbon-based negative active material.

YOON H J, KIM S Y, SUNG K W, LEE E J, YOON H, KIM S, SUNG K, LEE E, LI E, CHENG Q, JIN S, YIN X

Method of forming graphene on substrate, involves treating surface of substrate placed in reaction chamber with plasma, and growing graphene on surface of substrate by plasma enhanced chemical vapor deposition (PECVD).

SHIN K, KIM C, YAMAMOTO K, LEE C, SONG H, LEE E, BYUN K, SHIN H, AN S, SHEN J, JIN C, SHAN B, LI C, SONG X, LI Y, BIAN Q, SHEN X, AN X, SHIN K W, LEE C S, SONG H J, BYUN K E, SHIN H J, AHN S J

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Graphene structure for producing three-dimensional shape of e.g. electronic circuit, comprises template having three-dimensional shape and rod shape, graphene to cover portion of outer circumference of template, and supporting layers.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Composite structure useful in logic device, memory device and supercapacitor, comprises first graphene, second graphene separated apart from first graphene, one-dimensional nanostructure, and substrate on which graphenes is disposed.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, KIM B S, LEE E K, WHANG D M

Composite structure for manufacturing a logic device, a memory device, a supercapacitor and a flexible and stretchable device, comprises graphene sheets disposed at a regular interval, and a nanostructure oriented through the sheets.

CHOI B, LEE E, WHANG D, KIM B, CHOE P Y, I E K, HWANG T M, KIM P S, CHOI B L, WHANG D M, KIM B S, LEE E K