国家/地区 韩国（5） 美国（3） 中国（2）
IPC部 C（4） H（4） B（2）
IPC大类 C01（4） H01（4） C23（2）
IPC小类 C01B（4） H01L（3） C23C（2）
IPC C01B032/186（3） C01B031/04（2） C23C016/26（2）
发明人 LEE H C（5）
公开年
申请年 2015（2）  2019（2） 
专利权人 CENT ADVANCED SOFT ELECTRONICS（5）

Optical sensor for light detection in wide spectral range, has source and drain electrodes formed on first graphene layer and semiconductor layer, without being electrically connected to barrier layer and first graphene layer, respectively.

CHO K W, LEE H C, YOO M S, CHUNG H J

Method for manufacturing multilayer graphene, involves subjecting graphene precursor to chemical vapor deposition on metal substrate containing nonmetal element, manufacturing graphene that is doped with element on metal substrate.

CHO K, YOO M S, LEE H C, CHO K W, ZHAO J, YU M, LI X

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Producing graphene useful in electronic device i.e. field effect transistor, electrode, touch panel and backlight, comprises forming organic layer on metal catalyst, and heating metal catalyst to form graphene on the metal catalyst.

CHO K, LEE E, LEE H C

Manufacture of graphene used in manufacture of electric device, involves contacting hydrogen gas with metal catalyst, contacting metal catalyst with hydrocarbon gas, nitrogen gas, or inert gas, and forming graphene on metal catalyst.

CHO K W, LEE H C, LEE E H, CHO K, LEE E, LEE H, LI E