国家/地区 美国（8） 韩国（5） 中国（3） 台湾（3）
IPC部 C（10） H（6） B（3）
G（2）
IPC大类 C01（6） H01（6） C08（2）
C09（2）
IPC小类 C01B（6） H01L（4） C08K（2）
C09D（2） H01M（2）
IPC C01B031/04（6） H01L029/16（4） H01L029/786（3）
H01L021/336（2） H01L029/78（2）
发明人 LEE K（11）
公开年 2016（5） 2015（3） 2017（3）
申请年 2015（11）
专利权人 UNIV CHUNG Y.（4） SAMSUNG ELEC.（3）

Light-emitting diode comprises electrode containing graphene, electrode, and semiconductor layer provided at point of intersection of electrodes.

HWANG J H, JUNG D I, JIN K S, TCHOE Y, LEE K, YI G C

Preparation of graphene composite material used in e.g. solar panels, involves adding and mixing graphene material and modification solution comprising compound having catechol group, and solvent.

HUNG W, HU C, LEE K, LAI J, HONG W, HU Q, LI K, HUNG W S, LEE K R, LAI J Y

Graphene film and manufacturing method.

HUNG W, HU C, LEE K, LAI J

Graphene filtering sheet comprises reduced graphene oxide which is dispersed in macromolecule to become a macromolecule composite sheet.

HUNG W, LIU W, CHIU Y, YANG Y, HU C, LEE K, LAI J, HUNG W S, LIU W J, CHIU Y J, YANG Y C, HU C C, LEE K R, LAI J Y, HONG W, QIU Y, HU Q, LI K

Three-dimensional mesopore containing graphene derived from nickel (II) complexes, used for bifunctional catalyst for e.g. fuel cell, includes hollow carbon housing that comprises multiple graphene layers.

HOI R M, LEE K

Fabrication of composite film used as substrate of flat panel display, involves coating polymer/graphene oxide casting solution on substrate to form film in which graphene oxide has layered structure, drying and heat-treating film.

CHEN J, HU C, LEE K, LAI J

Fin-type graphene device i.e. graphene FET, for e.g. optical sensor, has gate electrode placed on gate insulating layer, and source electrode and separate drain electrode that are placed on side surface of graphene channel layer.

LEE M, LEE J, HEO J, LEE K, LEE M H, LEE J H, HEO J S, LEE K Y

Graphene device i.e. multi-functional device, for use in e.g. electronic apparatus e.g. transistor, has gate for facing functional layer with graphene layer, and gate insulation layer formed between graphene layer and gate.

HEO J, LEE K, PARK S, HEO J S, LEE K Y, PARK S J, LEE G, HUH J

Method for manufacturing color filter (CF) substrate, involves placing and washing combination of transfer medium layer/graphene film/CF substrate portion in transfer medium layer removing solvent to remove transfer medium layer.

LEE K, WANG Y

Electronic device such as optical device, has graphene layer that includes multiple nanocrystal graphenes and multiple graphene protrusions and graphene layer is covered by semiconductor layer.

SHIN H, KIM S, LEE K, PARK H, CHO E, CHO E B, KIM S W, LEE K H, PARK H J, SHIN H J