国家/地区 韩国（3）
IPC部 H（3）
IPC大类 H01（3）
IPC小类 H01L（3）
IPC
发明人 LEE S S（3）
公开年 2012（2）
申请年 2010（3）
专利权人 SAMSUNG LED .（2）

Method for manufacturing nitride single crystal of semiconductor LED, involves forming mask layer on nitride base layer, and forming multiple openings in upper side of mask layer, where mask layer is made of graphene.

CHUNG H J, HWANG S W, KIM M H, SEONG H K, LEE S S, CHA N G

Light emitting device, has compound layout structure laminated with semiconductor layers and active layer, graphene layer coated with exterior part of semiconductor layout structure, and light emission part provided with electrode.

LEE S S, KIM M H, SONE C S, HWANG S W, HONG B H

Thin film transistor for use in graphene device, comprises two dimensional graphene channel layer comprising 1,2,2a,3,4,4a,5,6,6a,7,8,8a,9,10,10a,11,12,12a-octadecahydro-coronene compound.

LEE S S, LEE K I, LIM J, LEE Y K, JEONG S J, CHUNG T M, KIM C G, AN K S