国家/地区 韩国（7）
IPC部 C（5） B（3） H（2）
IPC大类 C01（4） B01（2） C08（2）
H01（2）
IPC小类 C01B（4） B01J（2） C08K（2）
H01B（2）
IPC B01J019/12（2） C01B031/02（2） C01B031/04（2）
C08K003/04（2） H01B001/24（2） H01B005/00（2）
发明人 LEE S S（7）
公开年 2013（2）
申请年 2012（2） 
专利权人 KOREA INST SCI TECHNOLOGY（7）

Laminate has metallic foil of monocrystal and graphene layer formed on metallic foil of monocrystal.

HYUK P J, LEE S S, SON J G, PARK M, KIM H, BAE W K, LIM S H

Manufacture of three-dimensional graphene used for manufacturing of reduced graphene, involves providing core-shell composite in which core is surrounded by graphene or graphene derivative as shell material, and etching.

GON S J, LEE S S, JANG Y L, KIM H, JONG H P, BAE W K

Conducting compound for flexible electric component, has main portion that is comprised with polymer infiltrated within pore of reduction graphene oxide board structure.

KIM T A, LEE S S, PARK M, KIM H S, PYO J B, LIM S H, SON J G

Manufacture of doped graphene for manufacturing semiconductor, involves mixing graphite powder and acid solution, oxidizing, drying, impregnating graphite oxide solid to organic compound aqueous solution, microwave heating and reducing.

LEE S S, KIM H, PARK M, LIM S H, GON S J, KWANG H L, KIM T A

Manufacturing boron-doped reduced graphene, useful as semiconductor with p-type characteristics, comprises adding boron oxide to graphene oxide, removing solvent from resulting solution to obtain solid mixture, and heating the solid mixture.

KIM H, DA YOUNG Y, PARK M, LIM S H, GON S J, LEE S S

Thermal conductive material for electronic packaging, is made of thermal conductive hollow particles chosen from carbon nanotube, graphene, graphite nanosheet, aluminum nitride, boron nitride and aluminum oxide, in polymer resin.

LEE S S, KIM J K, LIM S H, PARK M, KIM H, SU L S, GYEONG K J, HO I S, SUK K H

Electroconductive particle comprising a polymer microparticle and graphene coating layer grafted on the polymer microparticle, useful in anisotropic conductive film for packaging electronic devices.

LEE S, KIM K, LIM S H, PARK M, KIM J K, KIM H, LEE H, KIM G, IM S, KIM J, KIM K H, KIM H S, YI S S, I H J, SU LEE S, SUK KIM H, JEONG LEE H, GYEONG KIM J, HO IM S, LEE S S