国家/地区 韩国（4）
IPC部 H（4） C（2）
IPC大类 H01（3） C08（2）
IPC小类 C08J（2） H01L（2）
IPC H01L023/532（2） H01L027/108（2）
发明人 LIM H（4）
公开年 2022（2）
申请年 2021（2） 
专利权人 SAMSUNG ELEC.（2）

Semiconductor device has lower graphene layer which is in contact with lower surface of ruthenium wiring, and extends along lower surface of ruthenium wiring, and wiring line cap layer that extends along upper surface of ruthenium wiring.

LEE J E, LEE M J, KIM W D, SHIN H J, LEE H B, LIM H S, LEEMINJOO, LIM H, LI X, SHEN X, JIN W, LEE M, LI J

Wiring structure for use in semiconductor device, has first conductive pattern, ohmic contact pattern, oxidation prevention pattern, diffusion barrier, and second pattern sequentially stacked in stated order on substrate.

JEONG G, LEE S, YOON J, YAMAMOTO K, SHIN H, BYUN K, CHO M, LIM H, ZHENG G, LI Z, YOUN J, SHAN B, SHEN X, LIM H S, JO M, BYUN K E, SHIN H J, SU Y J, LEE S Y, JUNG K O

Touch panel e.g. capacitive touch panel for electronic appliance, has planar layer that is formed on substrate, and has transparent electrode that is arranged on substrate and made from carbon nano-tube, silver nano-wire or graphene.

LIM H S, SOHN H M, YOU Y S, LIM J W, LIM H, SOHN H, YOU Y, LIM J

Polymer resin composition useful for manufacturing an insulating film for manufacture of a build-up multi-layered printed circuit board, comprises polymer resins, and graphene for linking the polymer resins with larger attraction.

LEE K S, HONG S S, LIM H H, LEE H Y, CHO J C, KYU S L, SANG S H, HYUN H L, HWA Y L, JAE C C, HONG S, LEE H, LEE K, LIN H, JO J, LIM H, CHO J