国家/地区 台湾（6） 美国（5）
IPC部 C（7） H（2）
IPC大类 C01（6） C25（4） H01（2）
IPC小类 C01B（6） C25B（4） H01L（2）
IPC C01B031/04（5） C25B001/00（2）
发明人 LIN C（10）
公开年 2013（4） 2014（4） 2012（2）
申请年 2012（10）
专利权人 CHUNG SHAN I.（6） INT BUSINESS.（2）

Device for continuously producing graphene flakes by electrochemical technique, has grading collection unit for receiving graphene flakes separated by filtration unit and separating different sized graphene flakes.

CHENG Y, YEH T, LI L, GEE C, LIN C, WANG P, LIANG C

Making shaped graphene sheets comprises providing initial material of artificial oriented graphite and shaping to obtain laminated material, electrochemically processing laminated material using electrolyte solution, and filtering solution.

LIN C, LIANG C, GEE C, WANG P, CHENG Y

A discrete graphene nanodisk as the charge storage layer for manufacturing method and memory application.

LIN C, WANG J, LAI C, CHAN C, LIN C T, WANG J C, LAI C S, CHAN C F

A novel device which can continuously produce graphene flakes by electrochemical method.

WANG P, LIANG C, GEE C, CHENG Y, LIN C, WANG P L, LIANG C W, GEE C M, CHENG Y C, LIN C J

Method for preparing graphene sheet and its graphene sheet precursor performing thermal treatments of different temperatures on the mixture of a carbon precursor as the binder and a filler.

GEE C, YEH T, CHENG Y, LIN C, LI L

Process for producing graphene with specific shape using graphite with the artificial orientation as the raw material for composite material formation.

SU C, GEE C, CHENG Y, LIN C, LI L

Apparatus, used to produce graphene or its oxide, comprises first electrode with graphite, second electrode, container containing electrolyte, in which the electrodes are immersed, power supply to supply bias voltages and filtration module.

LI L, SU C, LIN C, WU F, LI L J, SU C Y, LIN C T

Film formation device for continuous large-area spray-coating of graphene.

LIANG C, CHEN W, GEE C, WANG P, CHENG Y, LIN C

Fabrication method for forming sensor e.g. graphene biosensor involves forming sensor having first dielectric layer disposed on substrate, graphene layer disposed on first dielectric layer and gate region disposed on sacrificial layer.

GUO D, HAN S, LIN C, SU N

Method of forming three-dimensional (3D) integrated circuit (IC) structure used in semiconductor industry, involves forming gate dielectric layer and gate electrode layer over patterned graphene layer.

GUO D, HAN S, LIN C, SU N, HEN S