国家/地区 中国（3）
IPC部 C（2）
IPC大类
IPC小类
IPC
发明人 LIU H（3）
公开年 2010（2）
申请年 2010（3）
专利权人 CHINESE ACAD.（2）

Manufacture of graphene involves adding iron catalyst into oxygen-free reactor, supplying gas carbon source into reactor and reacting.

LIU H, LIU Y, XUE Y, WU B, YU G, GUO Y, CHEN J, HUANG L, GENG D

Preparation of halogenated graphite for use in preparation of halogenated graphene, involves reacting expanded graphite with halogen simple substance under microwave radiation.

ZHENG J, LIU H, LIU Y, ZHU D, WU B, YU G, DI Z, GUO Y

Graphene metal oxide semiconductor (MOS) transistor for graphene-based integrated circuit, has gate region arranged on trench region while gate medium is arranged between gate region and trench region.

WANG P, ZHANG W, LIU H, GU J